Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix

被引：0
|
作者：
机构：
[1] Strong, Wyatt H.
[2] Forbes, David V.
[3] Hubbard, Seth M.
来源：
Hubbard, Seth M. | 1600年 / Elsevier Ltd卷 / 25期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Gallium arsenide
引用
收藏
相关论文
共 50 条
  • [31] Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field
    G. Sallen
    S. Kunz
    T. Amand
    L. Bouet
    T. Kuroda
    T. Mano
    D. Paget
    O. Krebs
    X. Marie
    K. Sakoda
    B. Urbaszek
    Nature Communications, 5
  • [32] Discovery of classes among deep level centers in gallium arsenide
    Engstrom, O.
    Kaniewska, M.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 138 (01): : 12 - 15
  • [33] DEEP LEVEL STUDIES OF OXYGEN DOPED GALLIUM-ARSENIDE
    NAYAR, S
    PENCHINA, CM
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 256 - 256
  • [34] Self-organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by molecular beam epitaxy
    Singer, K.E., 1600, (64):
  • [35] Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field
    Sallen, G.
    Kunz, S.
    Amand, T.
    Bouet, L.
    Kuroda, T.
    Mano, T.
    Paget, D.
    Krebs, O.
    Marie, X.
    Sakoda, K.
    Urbaszek, B.
    NATURE COMMUNICATIONS, 2014, 5
  • [36] INVESTIGATION OF DEEP LEVELS IN GALLIUM-ARSENIDE BY CAPACITANCE SPECTROSCOPY
    KRAVCHENKO, AF
    PRINZ, VY
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1980, (01): : 52 - 63
  • [37] OPTICAL PROPERTIES OF ELECTRON-IRRADIATED AND NEUTRON-IRRADIATED GALLIUM-ARSENIDE
    VAIDYANATHAN, KV
    SWANSON, ML
    WATT, LAK
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 10 (01): : 127 - +
  • [38] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION
    DANNEFAER, S
    HOGG, B
    KERR, D
    PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366
  • [39] ELECTRON HEATING IN GALLIUM-ARSENIDE AND INDIUM PHOSPHIDE AT LOW-TEMPERATURES
    EMELYANENKO, OV
    NASLEDOV, DN
    NEDEOGLO, DD
    FIZIKA TVERDOGO TELA, 1973, 15 (06): : 1712 - 1717
  • [40] Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide
    Fiore, A
    Oesterle, U
    Stanley, RP
    Houdré, R
    Lelarge, F
    Ilegems, M
    Borri, P
    Langbein, W
    Birkedal, D
    Hvam, JM
    Cantoni, M
    Bobard, F
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (08) : 1050 - 1058
12345