Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix

被引：0
|
作者：
机构：
[1] Strong, Wyatt H.
[2] Forbes, David V.
[3] Hubbard, Seth M.
来源：
Hubbard, Seth M. | 1600年 / Elsevier Ltd卷 / 25期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Gallium arsenide
引用
收藏
相关论文
共 50 条
  • [1] Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix
    Strong, Wyatt H.
    Forbes, David V.
    Hubbard, Seth M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 25 : 76 - 83
  • [2] Investigation of deep level defects in electron irradiated indium arsenide quantum dots embedded in a gallium arsenide matrix
    Strong, Wyatt H.
    Forbes, David V.
    Hubbard, Seth M.
    Materials Science in Semiconductor Processing, 2014, 25 : 76 - 83
  • [3] Kinetics of Indium Arsenide Quantum Dots Formation on Gallium Arsenide (001) Substrate
    Lyamkina, Anna A.
    Dmitriev, Dmitriy V.
    Moshchenko, Sergey P.
    Toropov, Alexander I.
    EDM: 2009 10TH INTERNATIONAL CONFERENCE AND SEMINAR ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES, 2009, : 37 - +
  • [4] Phonon emission by optically pumped indium arsenide quantum dots in gallium arsenide
    Kent, AJ
    Akimov, AV
    Cavill, SA
    Bellingham, RJ
    Henini, M
    PHYSICA B-CONDENSED MATTER, 2002, 316 : 198 - 201
  • [5] The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
    Sun, Y.
    Cheng, S.F.
    Chen, G.
    Hicks, R.F.
    Cederberg, J.G.
    Biefeld, R.M.
    1600, American Institute of Physics Inc. (97):
  • [6] The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)
    Sun, Y
    Cheng, SF
    Chen, G
    Hicks, RF
    Cederberg, JG
    Biefeld, RM
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)
  • [7] Impact of Electronic States of Conical Shape of Indium Arsenide/Gallium Arsenide Semiconductor Quantum Dots
    Fayz-Al-Asad, Md
    Al-Rumman, Md
    Alam, Md Nur
    Parvin, Salma
    Tunc, Cemil
    APPLICATIONS AND APPLIED MATHEMATICS-AN INTERNATIONAL JOURNAL, 2021, 16 (02):
  • [8] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM ARSENIDE AND INDIUM GALLIUM ARSENIDE.
    Arora, Vijay K.
    Mui, David S.L.
    Morkoc, Hadis
    IEEE Transactions on Electron Devices, 1987, ED-34 (06) : 1231 - 1238
  • [9] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE
    ARORA, VK
    MUI, DSL
    MORKOC, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1231 - 1238
  • [10] ELECTRON PHONON INTERACTIONS IN INDIUM GALLIUM-ARSENIDE
    NASH, KJ
    SKOLNICK, MS
    BASS, SJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (06) : 329 - 336
12345