共 50 条
- [21] Behavior of misfit dislocations in GaAs epilayers grown on Si at low temperature by molecular beam epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 637 - 641
- [25] Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (10A): : L1238 - L1240
- [26] Molecular beam epitaxy growth of GaAs buffer at low temperature Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (12): : 768 - 770