Photocurrent study of molecular beam epitaxy GaAs grown at low temperature

被引:0
|
作者
机构
来源
| 1600年 / American Institute of Physics Inc.卷 / 87期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Behavior of misfit dislocations in GaAs epilayers grown on Si at low temperature by molecular beam epitaxy
    Asai, Koyu
    Katahama, Hisashi
    Shiba, Yasunari
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (1 B): : 637 - 641
  • [22] Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing
    Luo, JK
    Thomas, H
    Morgan, DV
    Westwood, D
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3622 - 3629
  • [23] INFRARED MEASUREMENTS IN ANNEALED MOLECULAR-BEAM EPITAXY GAAS GROWN AT LOW-TEMPERATURE
    HOZHABRI, N
    LEE, SH
    ALAVI, K
    APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2546 - 2548
  • [24] Photoreflectance and photoluminescence spectroscopy of low-temperature GaAs grown by molecular-beam epitaxy
    Sinha, S
    Arora, BM
    Subramanian, S
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) : 427 - 432
  • [25] Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy
    Chen, NF
    Wang, YT
    He, HJ
    Lin, LY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (10A): : L1238 - L1240
  • [26] Molecular beam epitaxy growth of GaAs buffer at low temperature
    Liang, Jiben
    Kong, Meiying
    Wang, Zhangui
    Zhu, Zhanping
    Duan, Wensin
    Wang, Chunyan
    Zhang, Xueyuan
    Zeng, Yiping
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (12): : 768 - 770
  • [27] PHOTOREFLECTANCE STUDY OF SI DELTA-DOPED LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    CHENG, TM
    CHANG, CY
    HSU, TM
    LEE, WC
    HUANG, JH
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) : 2124 - 2127
  • [28] RAMAN-STUDY OF DEFECTS IN A GAAS BUFFER LAYER GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
    BERG, RS
    MAVALVALA, N
    STEINBERG, T
    SMITH, FW
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (11) : 1323 - 1330
  • [29] TRANSMISSION ELECTRON-MICROSCOPY STUDY ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE
    CHEN, H
    LI, FH
    ZHOU, JM
    JIANG, C
    MEI, XB
    HUANG, Y
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (23) : 1617 - 1619
  • [30] Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxy
    Chen, JF
    Chen, NC
    Chiu, SY
    Wang, PY
    Lee, WI
    Chin, A
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8488 - 8492