High-quality GaN layers on c-plane sapphire substrates by plasma-assisted molecular-beam epitaxy using double-step AlN buffer process

被引：0

作者：

Jeganathan, Kulandaivel ^{[1
]}

Shen, Xu-Qiang ^{[1
]}

Ide, Toshihide ^{[1
]}

Shimizu, Mitsuaki ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Power Electronics Research Center, Natl. Inst. Adv. Indust. Sci. Tech., Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 7 A期

关键词：

D O I：

10.1143/jjap.41.4454

中图分类号：

学科分类号：

摘要：

Semiconducting films

引用

页码：4454 / 4457

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