High-quality GaN layers on c-plane sapphire substrates by plasma-assisted molecular-beam epitaxy using double-step AlN buffer process

被引：0
|
作者：
Jeganathan, Kulandaivel [1 ]
Shen, Xu-Qiang [1 ]
Ide, Toshihide [1 ]
Shimizu, Mitsuaki [1 ]
Okumura, Hajime [1 ]
机构：
[1] Power Electronics Research Center, Natl. Inst. Adv. Indust. Sci. Tech., Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 7 A期
关键词：
D O I：
10.1143/jjap.41.4454
中图分类号：
学科分类号：
摘要：
Semiconducting films
引用
收藏
页码：4454 / 4457
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