Ga2O3 crystal for power device

被引:0
|
作者
Hitora T.
Kaneko K.
Fujita S.
机构
关键词
D O I
10.1541/ieejjournal.137.693
中图分类号
学科分类号
摘要
[No abstract available]
引用
收藏
页码:693 / 696
页数:3
相关论文
共 50 条
  • [21] Vertical β-Ga2O3 Power Transistors: A Review
    Wong, Man Hoi
    Higashiwaki, Masataka
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 3925 - 3937
  • [22] Current status of Ga2O3 power devices
    Higashiwaki, Masataka
    Murakami, Hisashi
    Kumagai, Yoshinao
    Kuramata, Akito
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [23] Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates
    Sasaki, Kohei
    Higashiwaki, Masataka
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (04) : 493 - 495
  • [24] Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructures Growth for Power Electronics
    Miller, Ross
    Alema, Fikadu
    Osinsky, Andrei
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 31 (04) : 467 - 474
  • [25] Etching of Ga2O3: an important process for device manufacturing
    Xi, Zhaoying
    Liu, Zeng
    Fang, Junpeng
    Bian, Ang
    Zhang, Shaohui
    Zhang, Jia-Han
    Li, Lei
    Guo, Yufeng
    Tang, Weihua
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (49)
  • [26] β-Ga2O3 and single-crystal phosphors for high-brightness white LEDs & LDs, and β-Ga2O3 potential for next generation of power devices
    Villora, Encarnacion G.
    Arjoca, Stelian
    Shimamura, Kiyoshi
    Inomata, Daisuke
    Aoki, Kazuo
    OXIDE-BASED MATERIALS AND DEVICES V, 2014, 8987
  • [27] Fabrication of Ga2O3/Si direct bonding interface for high power device applications
    Liang, Jianbo
    Takatsuki, Daiki
    Shimizu, Yasuo
    Higashiwaki, Masataka
    Ohno, Yutaka
    Nagai, Yasuyoshi
    Shigekawa, Naoteru
    2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2021, : 19 - 19
  • [28] Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Base Power Device Applications
    Labed, Madani
    Park, Bo-In
    Kim, Jekyung
    Park, Jang Hyeok
    Min, Ji Young
    Jeon, Ho Jung
    Kim, Jeehwan
    Rim, You Seung
    ACS NANO, 2025,
  • [29] Transferred Graphene Monolayer to β-Ga2O3 as a Diffusion Barrier for Based Power Device Applications
    Labed, Madani
    Park, Bo-In
    Kim, Jekyung
    Park, Jang Hyeok
    Min, Ji Young
    Jeon, Ho Jung
    Kim, Jeehwan
    Rim, You Seung
    ACS NANO, 2025, 19 (09) : 8842 - 8851
  • [30] Ga2O3 MOSFET Device with Al2O3 Gate Dielectric
    Lv Yuan-Jie
    Song Xu-Bo
    He Ze-Zhao
    Tan Xin
    Zhou Xing-Ye
    Wang Yuan-Gang
    Gu Guo-Dong
    Feng Zhi-Hong
    JOURNAL OF INORGANIC MATERIALS, 2018, 33 (09) : 976 - 980