Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate

被引：0

作者：

Li, Bing-Hui ^{[1
]}

Yao, Bin ^{[1
,2
]}

Li, Yong-Feng ^{[1
]}

Deng, Rui ^{[2
]}

Zhang, Zhen-Zhong ^{[1
]}

Liu, Wei-Wei ^{[1
]}

Shan, Chong-Xin ^{[1
]}

Zhang, Ji-Ying ^{[1
]}

Shen, De-Zhen ^{[1
]}

机构：

[1] Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

[2] Department of Physics, Jilin University, Changchun 130023, China

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2010年 / 31卷 / 06期

关键词：

Molecular beam epitaxy - Magnesia - Gallium arsenide - II-VI semiconductors - Light emitting diodes - Zinc oxide - Heterojunctions - Light - Molecular beams - Semiconducting gallium - Threshold voltage - III-V semiconductors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.

引用

页码：854 / 858

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