Precipitation in As-ion-implanted and annealed InAs

被引：0

作者：

Kim, Seon-Ju ^{[1
]}

Han, Haewook ^{[1
]}

机构：

[1] Center for Terahertz Photonics, Dept. of Elec. and Comp. Eng., Pohang Univ. of Sci. and Technology, San-31 Hyoja-Dong, Nam-Gu, Pohang, Kyungbuk 790-784, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 11期

关键词：

Annealing - Arsenic - Crystal defects - Crystalline materials - Indium compounds - Ion implantation - Thermal effects - Transmission electron microscopy - X ray diffraction analysis;

D O I：

10.1143/jjap.40.6323

中图分类号：

学科分类号：

摘要：

Low-energy As-ion-implanted InAs was examined using double-crystal X-ray diffraction and transmission electron microscopy. For uniform defect distribution, multiple implantations were made at 0.05-0.4 MeV with 4 × 1014-5 × 1015 ions/cm2. After annealing at 600°C for 20 min, As precipitates were observed, and the implantation-induced strain was significantly reduced, showing the recovery of crystallinity. The density of the As precipitates was 7.4 × 1016 cm-3 and the mean diameter was 55 Å, which corresponds to a volume fraction of 1.1%.

引用

页码：6323 / 6324

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