Precipitation in As-ion-implanted and annealed InAs

被引：0
|
作者：
Kim, Seon-Ju [1 ]
Han, Haewook [1 ]
机构：
[1] Center for Terahertz Photonics, Dept. of Elec. and Comp. Eng., Pohang Univ. of Sci. and Technology, San-31 Hyoja-Dong, Nam-Gu, Pohang, Kyungbuk 790-784, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 11期
关键词：
Annealing - Arsenic - Crystal defects - Crystalline materials - Indium compounds - Ion implantation - Thermal effects - Transmission electron microscopy - X ray diffraction analysis;
D O I：
10.1143/jjap.40.6323
中图分类号：
学科分类号：
摘要：
Low-energy As-ion-implanted InAs was examined using double-crystal X-ray diffraction and transmission electron microscopy. For uniform defect distribution, multiple implantations were made at 0.05-0.4 MeV with 4 × 1014-5 × 1015 ions/cm2. After annealing at 600°C for 20 min, As precipitates were observed, and the implantation-induced strain was significantly reduced, showing the recovery of crystallinity. The density of the As precipitates was 7.4 × 1016 cm-3 and the mean diameter was 55 Å, which corresponds to a volume fraction of 1.1%.
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页码：6323 / 6324
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