Phenomenological theory on Si layer-by-layer oxidation with small interfacial islands

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作者：
Shiraishi, Kenji [1 ]
Kageshima, Hiroyuki [1 ]
Uematsu, Masashi [1 ]
机构：
[1] NTT Basic Research Lab, Atsugi, Japan
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| 1600年 / JJAP, Tokyo卷 / 39期
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