Characteristics of band-to-band tunneling hot hole injection for erasing operation in charge-trapping memory

被引：0
|
作者：
Sun, Lei [1 ]
Pan, Liyang [1 ]
Pang, Huiqing [1 ]
Zeng, Ying [1 ]
Zhang, Zhaojian [1 ]
Chen, John [2 ]
Zhu, Jun [1 ]
机构：
[1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China
[2] Semiconductor Manufacturing International Corporation, Shanghai 201203, China
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 4 B期
关键词：
In this paper; we present a combined charge-pumping measurement method for charge distribution profiling in charge-trapping memory. Electron and hole distributions after channel hot electron (CHE) or channel-initialed secondary electron (CHISEL) programming and band-to-band tunneling hot hole (BBHH) erasing are accurately determined. It is shown that BBHH-induced hot holes distribute in a narrow region near the drain junction; and cannot neutralize all the electrons particularly in CHISEL-programmed devices. The influence of the BBHH erasing condition on the width of hole distribution is demonstrated; and the effects on the characteristics of erasing speed and P/E cycling endurance are investigated and analyzed. It is shown that in the CHE-programmed devices; the erasing speed can be enhanced and endurance characteristics can be improved if a high drain voltage is used during erasing operation. © 2006 The Japan Society of Applied Physics;
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页码：3179 / 3184
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