Study of time-dependent effect on surface minority carriers of MOS structure

被引：0
|
作者：
Liu, Yan-Hong [1 ]
Wei, Xi-Wen [1 ]
Xu, Ming-Zhen [2 ]
Tan, Chang-Hua [2 ]
机构：
[1] Dept. of Phys., Dalian Univ. of Technol., Dalian 116024, China
[2] Inst. of Microelectron., Beijing Univ., Beijing 100871, China
来源：
Dalian Ligong Daxue Xuebao/Journal of Dalian University of Technology | 2000年 / 40卷 / 06期
关键词：
Charge carriers - Electric charge - Electric potential - Numerical methods;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
For further studying the surface process of semiconductor, based on Zerbst equation, an approximate analytical solution for the relationship between the depletion width and time was given by numerical fitted method when voltage pulse was applied to MOS structure. Then the time-dependence process of minority carriers was analyzed, and its approximate solution was obtained, which is in agreement with the experimental data. This work provides a useful tool for analysis of CCD.
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页码：661 / 663
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