Fabrication of blue GaN light-emitting diodes by laser etching

被引：0

作者：

Yang, Fu-Hsiang ^{[1
]}

Hsiao, Chao-Jen ^{[1
]}

Yang, Ying-Jay ^{[2
]}

Lin, Jun-Hong ^{[1
]}

Wang, Lon ^{[2
]}

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

[2] Institute of Optoelectronic Engineering, National Taiwan University, Taipei, Taiwan

来源：

| 2002年 / Japan Society of Applied Physics卷 / 41期

关键词：

Atomic force microscopy - Current voltage characteristics - Etching - Excimer lasers - Gallium nitride - Irradiation - Laser applications - Morphology - Optical variables measurement - Photoluminescence - Photoresists - Semiconductor device manufacture;

D O I：

10.1143/jjap.41.l468

中图分类号：

学科分类号：

摘要：

GaN light-emitting diodes (LEDs) were fabricated using a 248 nm KrF excimer laser. Thick photoresist was used to form an etching mask to resist the strong laser irradiation and the unmasked top p-type GaN layer was removed effectively to reveal the bottom n-type GaN layer for the n-type contact. The etching rate of GaN film by laser irradiation and the morphology of the etched surface were studied by atomic force microscopy (AFM). Current-voltage (I-V) and photoluminescence (PL) characteristics of GaN LEDs fabricated by laser etching were measured and compared to those of LEDs fabricated by commercial inductively coupled plasma (ICP) etching. The performance of GaN LEDs fabricated by laser etching was comparable to that of LEDs fabricated by commercial ICP etching.

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