Interface effects of polycrystalline Fe2O3 thin films on Pt

被引:0
|
作者
Kostriukov, Vladimir [1 ,2 ]
Geri, Lidor [1 ,2 ]
Sharoni, Amos [1 ,2 ]
机构
[1] Bar Ilan Univ, Dept Phys, IL-5290002 Ramat Gan, Israel
[2] Bar Ilan Univ, Bar Ilan Inst Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, Israel
基金
以色列科学基金会;
关键词
MAGNETORESISTANCE;
D O I
10.1063/5.0235217
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetic state of an antiferromagnetic (AFM) insulator can be read and manipulated in spintronics devices using bilayers of an AFM and a conducting layer, making it useful for spintronics devices. To date, research has focused on single crystals of AFMs, which enables the study of properties related to different crystallographic surfaces. However, combining single-crystal AFMs in spintronics devices may be problematic due to substrate selectivity and deposition conditions. In this work, we study the properties of polycrystalline Fe(2)O(3 )coupled with Pt as the conducting layer, asking how the magnetoresistive behavior differs in polycrystalline AFMs. We report on the angle dependent magnetoresistance and transverse magnetoresistance properties as a function of temperature and magnetic fields, comparing Fe2O3/Pt and Fe2O3/Cu/Pt thin films, in addition to magnetometry and structural characterization. The magnetoresistance signals do not depend on the thickness or volume behavior of the Fe2O3 layer, but rather the Fe2O3/Pt interface. Angle dependent magnetoresistance measurements show ferromagnetic-like behavior but with a non-standard effect of field, while transverse measurements show a sign change with temperature. This differs from effects reported for single-crystal Fe(2)O3 based bilayers. Interestingly, using transverse field measurements, we find that at low temperatures, the Fe2O3/Pt interface spins develop a glass-like relaxation of the magnetic signal, which undergoes freezing as the sample is further cooled.
引用
收藏
页数:10
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