Micro-structure transformation of silicon: A newly developed transformation technology for patterning silicon surfaces using the surface migration of silicon atoms by hydrogen annealing

被引：0
|
作者：
Sato, Tsutomu [1 ]
Mitsutake, Kunihiro [1 ]
Mizushima, Ichiro [1 ]
Tsunashima, Yoshitaka [1 ]
机构：
[1] Proc. and Mfg. Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 9 A期
关键词：
D O I：
10.1143/jjap.39.5033
中图分类号：
学科分类号：
摘要：
Semiconducting silicon
引用
收藏
页码：5033 / 5038
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