AlGaN/GaN high-electron-mobility transistor employing an additional gate for high-voltage switching applications

被引：0
|
作者：
机构：
[1] Min-Woo, H.A.
[2] Lee, Seung-Chul
[3] Her, Jin-Cherl
[4] Seo, Kwang-Seok
[5] Han, Min-Koo
来源：
Min-Woo, H.A. (isobar@emlab.snu.ac.kr) | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Electron mobility;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Characteristics of Triple Material Gate AlGaN/GaN High Electron Mobility Transistor
    Bin Kashem, Md. Tashfiq
    Subrina, Samia
    2015 INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRICAL ENGINEERING (ICAEE), 2015, : 352 - 355
  • [32] Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si
    Zhi-Yao Zhang
    Shun-Tsung Lo
    Li-Hung Lin
    Kuang Yao Chen
    J. Z. Huang
    Zhi-Hao Sun
    C. -T. Liang
    N. C. Chen
    Chin-An Chang
    P. H. Chang
    Journal of the Korean Physical Society, 2012, 61 : 1471 - 1475
  • [33] Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si
    Zhang, Zhi-Yao
    Lo, Shun-Tsung
    Lin, Li-Hung
    Chen, Kuang Yao
    Huang, J. Z.
    Sun, Zhi-Hao
    Liang, C. -T.
    Chen, N. C.
    Chang, Chin-An
    Chang, P. H.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (09) : 1471 - 1475
  • [34] An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
    Shealy, JR
    Kaper, V
    Tilak, V
    Prunty, T
    Smart, JA
    Green, B
    Eastman, LF
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) : 3499 - 3509
  • [35] AlGaN/GaN High-electron-mobility Transistor(HEMT) Employing Schottky Contact on the Unetched Region and the Silicon Dioxide Passivation
    Choi, Young-Hwan
    Kim, Sun-Jae
    Lim, Jiyong
    Cho, Kyu-Heon
    Kim, Young-Shil
    Ji, In-Hwan
    Han, Min-Koo
    2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, : 2590 - 2593
  • [36] Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors
    张凯
    曹梦逸
    陈永和
    杨丽媛
    王冲
    马晓华
    郝跃
    Chinese Physics B, 2013, (05) : 488 - 491
  • [37] AlGaN/GaN high-electron-mobility transistor with distributed gate grown on stripe-patterned Si(111) substrate
    Lin, Jyun-Hao
    Huang, Shyh-Jer
    Lai, Chao-Hsing
    Su, Yan-Kuin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
  • [38] Analysis of On-State Gate Current of AlGaN/GaN High-Electron-Mobility Transistor under Electrical and Thermal Stresses
    Hayashi, Kazuo
    Sasaki, Hajime
    Oishi, Toshiyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (12)
  • [39] Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor
    Dai, Yang
    Gao, Leiyu
    Li, Yukun
    Zuo, Jing
    Zhang, Yue
    Zhao, Wu
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2025, 44 (04) : 1544 - 1552
  • [40] Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
    Haziq, Muhaimin
    Falina, Shaili
    Manaf, Asrulnizam Abd
    Kawarada, Hiroshi
    Syamsul, Mohd
    MICROMACHINES, 2022, 13 (12)
12345