AlGaN/InGaN/GaN double heterostructure field-effect transistor

被引：0

作者：

Simin, Grigory ^{[1
]}

Hu, Xuhong ^{[1
,2
]}

Tarakji, Ahmad ^{[2
]}

Zhang, Jianping ^{[1
]}

Koudymov, Alexey ^{[1
]}

Saygi, Salih ^{[1
]}

Yang, Jinwei ^{[1
]}

Khan, Asif ^{[1
]}

Shur, Michael S. ^{[2
]}

Gaska, Remis ^{[2
]}

机构：

[1] Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, United States

[2] Sensor Electronic Technology Inc., Latham, NY 12110, United States

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2001年 / 40卷 / 11 A期

关键词：

All Open Access; Green;

D O I：

10.1143/jjap.40.l1142

中图分类号：

学科分类号：

摘要：

Heterojunctions

引用

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