AlGaN/InGaN/GaN double heterostructure field-effect transistor

被引：0
|
作者：
Simin, Grigory [1 ]
Hu, Xuhong [1 ,2 ]
Tarakji, Ahmad [2 ]
Zhang, Jianping [1 ]
Koudymov, Alexey [1 ]
Saygi, Salih [1 ]
Yang, Jinwei [1 ]
Khan, Asif [1 ]
Shur, Michael S. [2 ]
Gaska, Remis [2 ]
机构：
[1] Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, United States
[2] Sensor Electronic Technology Inc., Latham, NY 12110, United States
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2001年 / 40卷 / 11 A期
关键词：
All Open Access; Green;
D O I：
10.1143/jjap.40.l1142
中图分类号：
学科分类号：
摘要：
Heterojunctions
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