Metalorganic chemical vapor deposition of conductive CaRuO3 thin films

CaRuO3 thin films expected for use as an electrode of ferroelectric random-access memory were prepared for the first time by metalorganic chemical vapor deposition (MOCVD) from the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C11H29O2)2(C8H23N5)x ]- tris(dipivaloylmethanato)ruthenium [Ru(C11H29O2)3]-O2 and the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C11H29O2)2(C8H23N5)x ]-bis(ethylcyclipentadienyl)ruthenium Ru[(C5H4)(C2H5)]2-O2 systems. Epitaxial films were obtained on (100)LaAlO3 and (100)SrTiO3 substrates at 750 °C, while randomly oriented films were obtained on a (100)MgO substrate. The resistivity of these films was about 200 μΩ&middotcm, and was confirmed to be independent of film thickness ranging from 70 to 300 nm. This value is lower than that of SrRuO3 thin films, about 280 μΩ&middotcm.