Correlation between photoluminescence intensity and micro structure in amorphous silicon films prepared by reactive RF sputtering

被引：0
|
作者：
Umezu, Ikurou [1 ,2 ]
Murota, Takatoshi [1 ]
Kawata, Masayuki [1 ]
Takashima, Yoshiaki [1 ]
Yoshida, Ken-ichi [1 ,2 ]
Inada, Mitsuru [2 ]
Sugimura, Akira [1 ,2 ]
机构：
[1] Department of Applied Physics, Konan University, Higashinada-ku, Kobe 658-8501, Japan
[2] Hightechnology Research Center, Konan University, Higashinada-ku, Kobe 658-8501, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2000年 / 39卷 / 8 B期
关键词：
Reactive sputtering;
D O I：
10.1143/jjap.39.l844
中图分类号：
学科分类号：
摘要：
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