Performance analysis of single-electron transistor at room-temperature for periodic symmetric functions operation

被引:3
|
作者
Miralaie, Mostafa [1 ]
Mir, Ali [1 ]
机构
[1] Faculty of Engineering, Lorestan University, Khoram-Abad, Iran
来源
Journal of Engineering | 2016年 / 2016卷
关键词
641.1 Thermodynamics - 714.2 Semiconductor Devices and Integrated Circuits - 942.2 Electric Variables Measurements;
D O I
10.1049/joe.2016.0139
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Operation of silicon single-electron devices at room temperature
    Nishiguchi, Katsuhiko
    Ono, Yukinori
    Fujiwara, Akira
    NTT Technical Review, 2007, 5 (06):
  • [22] Single-electron transistor based on a single cluster molecule at room temperature
    Soldatov, ES
    Khanin, VV
    Trifonov, AS
    Presnov, DE
    Yakovenko, SA
    Khomutov, GB
    Gubin, CP
    Kolesov, VV
    JETP LETTERS, 1996, 64 (07) : 556 - 560
  • [23] A silicon single-electron transistor memory operating at room temperature
    Guo, LJ
    Leobandung, E
    Chou, SY
    SCIENCE, 1997, 275 (5300) : 649 - 651
  • [24] Room-temperature single-electron transfer and detection with silicon nanodevices
    Nishiguchi, K
    Fujiwara, A
    Ono, Y
    Inokawa, H
    Takahashi, Y
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 199 - 202
  • [25] Room-temperature single-electron tunneling in conducting polypyrrole nanotube
    Saha, SK
    APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3645 - 3647
  • [26] Room-temperature single-electron effects in silicon nanocrystal memories
    Pace, C
    Crupi, F
    Lombardo, S
    Gerardi, C
    Cocorullo, G
    APPLIED PHYSICS LETTERS, 2005, 87 (18) : 1 - 3
  • [27] Evaluation of Room-Temperature Performance of Ultra-Small Single-Electron Transistor-Based Analog-to-Digital Convertors
    Miralaie, Mostafa
    Mir, Ali
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2018, 27 (14)
  • [28] Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot
    Saitoh, M
    Hiramoto, T
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 753 - 756
  • [29] Room-temperature carbon nanotube single-electron transistor with defects introduced by La(NO3)3 process
    Maeda, Masatoshi
    Iwasaki, Shin
    Kamimura, Takafumi
    Murata, Katsuyuki
    Matsumoto, Kazuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (07) : 5724 - 5726
  • [30] Room-temperature demonstration of integrated silicon single-electron transistor circuits for current switching and analog pattern matching
    Saitoh, M
    Harata, H
    Hiramoto, T
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 187 - 190