Impact of plasma induced damage on the fabrication of 3D NAND flash memory

被引：0
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作者：
Reiter, Tobias [1 ]
Klemenschits, Xaver [1 ]
Filipovic, Lado [1 ]
机构：
[1] Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, Vienna,1040, Austria
来源：
Solid-State Electronics | 2022年 / 192卷
关键词：
NAND circuits - Flash memory - Plasma applications - Epitaxial growth - Plasma etching;
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