Improved Low-Frequency Noise in Recessed-Gate E-Mode AlGaN/GaN MOS-HEMTs under Electrical and Thermal Stress

被引：0
|
作者：
Hu, Qianlan [1 ]
Gu, Chengru [2 ]
Zhan, Dan [2 ]
Li, Xuefei [2 ]
Wu, Yanqing [1 ,2 ]
机构：
[1] School of Electronics Engineering and Computer Science, Peking University, Beijing,100871, China
[2] Wuhan National High Magnetic Field Center, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan,430074, China
来源：
IEEE Journal of the Electron Devices Society | 2021年 / 9卷
基金：
中国国家自然科学基金;
关键词：
Energy-band alignment - High temperature - Interface trapping - Low-frequency - Low-Frequency Noise - Noise behavior - Noise characteristic - Scattering mechanisms;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
1/f noise provides essential information on the interface trapping effect as well as the scattering mechanism in transistors. In this work, a systematic 1/f noise study has been carried out on the recessed-gate enhancement-mode (E-mode) GaN MOS-HEMTs under electrical and thermal stress together with the depletion-mode (D-mode) counterpart. Low-frequency (1-1000 Hz) measurement has been performed at room (25 °C) and elevated (100 °C) temperatures at different carrier densities at the drain bias of 2 V and 10 V. The results show the E-mode device has much better noise characteristics under high voltage and high temperature compared with the D-mode counterpart. Moreover, charge-noise model reveals that the improved noise behavior of the E-mode device at high density and high drain bias at 100 °C originating from the energy band alignment at high biases, where the D-mode device suffers from extra charge trapping scattering in the gate edge near the gate-to-drain access region. © 2013 IEEE.
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页码：511 / 516
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