Influencing Factors and Suppression Methods for Current Unbalance of Parallel Silicon Carbide MOSFETs: A Review

被引:0
|
作者
Zhao, Zhibin [1 ]
Qiao, Jianshen [1 ]
Sun, Peng [1 ]
Cai, Yumeng [1 ]
Zhao, Bin [2 ]
Wei, Hong [3 ,4 ]
机构
[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing,102206, China
[2] State Grid Beijing Electric Power Research Institute, Beijing,100075, China
[3] NARI Group Corporation, State Grid Electric Power Research Institute, Co., Ltd., Nanjing,211000, China
[4] China EPRI Science & Technology Co., Ltd., Beijing,102200, China
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:634 / 648
相关论文
共 50 条
  • [41] Chemical Modification Methods of Nanoparticles of Silicon Carbide Surface (Review)
    Yegorov, Anton S.
    Ivanov, Vitaly S.
    Antipov, Alexey V.
    Wozniak, Alyona I.
    Tcarkova, Kseniia V.
    ORIENTAL JOURNAL OF CHEMISTRY, 2015, 31 (03) : 1269 - 1275
  • [42] Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs
    Sukhatme, Yash
    Miryala, Vamshi Krishna
    Ganesan, P.
    Hatua, Kamalesh
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2020, 67 (12) : 10121 - 10133
  • [43] HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT
    BILLON, T
    OUISSE, T
    LASSAGNE, P
    JASSAUD, C
    PONTHENIER, JL
    BAUD, L
    BECOURT, N
    MORFOULI, P
    ELECTRONICS LETTERS, 1994, 30 (02) : 170 - 171
  • [44] Analysis of Influencing Factors of Parallel Current Sharing of High Power Module
    Qi, Zhaoxuan
    Wang, Li
    He, Yongsheng
    2023 IEEE 2ND INDUSTRIAL ELECTRONICS SOCIETY ANNUAL ON-LINE CONFERENCE, ONCON, 2023,
  • [45] A Review of Influencing Factors and Identification Methods of Driver Stress
    Yang L.
    Yang Y.
    Song Y.-Z.
    Zhang Y.
    Jiaotong Yunshu Xitong Gongcheng Yu Xinxi/Journal of Transportation Systems Engineering and Information Technology, 2022, 22 (06): : 40 - 50
  • [46] Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke
    Zeng, Zheng
    Zhang, Xin
    Zhang, Zhe
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2020, 67 (02) : 1508 - 1519
  • [47] Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs
    Zhao, Bin
    Sun, Peng
    Yu, Qiuping
    Cai, Yumeng
    Zhao, Zhibin
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2021, 21 (03) : 394 - 404
  • [48] A Review of the Crosstalk Suppression Methods for SiC MOSFETs in the Phase-leg Circuit Configuration
    Ding, Yujie
    Mao, Saijun
    Wang, Zhikun
    Yang, Shuhao
    Li, Wenyu
    Zeng, Keqiu
    2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 206 - 212
  • [49] Current Balancing Methods for a High Power Silicon Carbide Inverter with Paralleled Modules
    Lin, Nan
    Wu, Yuheng
    Mahmud, Mohammad
    Zhao, Yue
    Mantooth, Alan
    2022 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2022, : 1586 - 1591
  • [50] A 3600 V/80 A Series-Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver
    Wu, Xinke
    Cheng, Shidong
    Xiao, Qiang
    Sheng, Kuang
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2296 - 2306