The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

被引：3

作者：

Lozinska, Adriana ^{[1
]}

Badura, Mikolaj ^{[1
]}

Bielak, Katarzyna ^{[1
]}

Sciana, Beata ^{[1
]}

Tlaczala, Marek ^{[1
]}

机构：

[1] Wroclaw Univ Sci & Technol, Fac Microsyst Elect & Photon, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland

来源：

OPTICA APPLICATA | 2020年 / 50卷 / 02期

关键词：

photoluminescence; quantum cascade lasers; MOVPE; TECHNOLOGY;

D O I：

10.37190/oa200208

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al-0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor hetero structures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

引用

页码：251 / 256

页数：6

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