Nanoscale on-chip inductors using a linearized meminductive circuit

被引:1
|
作者
Alaa A.M. [1 ]
机构
[1] Cairo University, Department of Electronics and Communications Engineering, Governorate, Giza
来源
IEEE Potentials | 2023年 / 42卷 / 02期
关键词
D O I
10.1109/MPOT.2014.2357972
中图分类号
学科分类号
摘要
This work presents a novel RF on-chip inductor that overcomes the problems with conventional large-sized inductors, which cannot be placed in an integrated circuit (IC) for large inductance values. The proposed inductor depends mainly on the meminductor, a new passive circuit element that has memory properties. This new circuit element is argued to be common in the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system. Being nonlinear, it is shown that, by a suitable arrangement of meminductors and through appropriate initial values for their inductances, we can achieve a linear nanoscale inductor. © 1988-2012 IEEE.
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页码:16 / 19
页数:3
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