Thermo Optical Phase Shifter with Low Thermal Crosstalk for SOI Strip Waveguide

被引：0

作者：

Sabouri, S. ^{[1
]}

Mendoza, L.A. ^{[1
]}

Catuneanu, M. ^{[1
]}

Namdari, M. ^{[2
]}

Jamshidi, K. ^{[1
]}

机构：

[1] Integrated Photonic Devices Group, Communications Laboratory, Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden,01069, Germany

[2] Fraunhofer Institute for Photonic Microsystems, Dresden,01069, Germany

来源：

IEEE Photonics Journal | 2021年 / 13卷 / 02期

关键词：

Economic and social effects - Phase shifters - Photonic devices - Silicon on insulator technology - Numerical models - Optical waveguides - Energy efficiency - Silicon photonics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The trade-offs of using thermo-optical phase shifter in different standard CMOS silicon-on-insulator (SOI) structures (strip and rib waveguides) are studied. Twelve different thermo-optic phase shifters, considering metal and highly doped silicon (both n-and p-type), are studied using numerical simulations and measurements. The performance of heater type, size, and distance to the strip waveguide in terms of energy efficiency, crosstalk, and response time is investigated. The required power to reach π phase shift is measured and compared with the numerical simulation. The time response and the corresponding figure of merit of the interferometer affected by each heater is analyzed and the design strategies for optimizing the designs are discussed. A new compact design for the phase shifter is suggested with low thermal crosstalk (ΔT © 2009-2012 IEEE.

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