The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field

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作者：
Vinoslavskii, M.M.
Belevskii, P.A.
Poroshin, V.M.
Vainberg, V.V.
Baidus, N.V.
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Fizika Nizkikh Temperatur | 2020年 / 46卷 / 06期
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Electric fields;
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页码：755 / 761
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