The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field

被引：0
|
作者：
Vinoslavskii, M.M.
Belevskii, P.A.
Poroshin, V.M.
Vainberg, V.V.
Baidus, N.V.
机构：
来源：
Fizika Nizkikh Temperatur | 2020年 / 46卷 / 06期
关键词：
Electric fields;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：755 / 761
相关论文
共 23 条
  • [1] Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field
    Vinoslavskii, M. N.
    Belevskii, P. A.
    Poroshin, V. N.
    Vainberg, V. V.
    Baidus, N. V.
    LOW TEMPERATURE PHYSICS, 2020, 46 (06) : 633 - 638
  • [2] Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
    Vinoslayskii, M. M.
    Belevskii, P. A.
    Poroshin, V. M.
    Pilipchuk, O. S.
    Kochelap, V. O.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2018, 21 (03) : 256 - 262
  • [3] The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells
    Ozturk, O.
    Ozturk, E.
    Elagoz, S.
    JOURNAL OF MOLECULAR STRUCTURE, 2018, 1156 : 726 - 732
  • [4] Optical properties of GaAs/AlGaAs double quantum wells in lateral electric field
    Vinnichenko, M. Ya
    Balagula, R. M.
    Makhov, I. S.
    Shumilov, A. A.
    Firsov, D. A.
    Vorobjev, L. E.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [5] Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells
    Pikhtin, AN
    Komkov, OS
    Bazarov, KV
    SEMICONDUCTORS, 2006, 40 (05) : 592 - 597
  • [6] Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells
    A. N. Pikhtin
    O. S. Komkov
    K. V. Bazarov
    Semiconductors, 2006, 40 : 592 - 597
  • [7] Effect of barrier width on the exciton states in coupled quantum wells in an applied electric field
    Sivalertporn, Kanchana
    PHYSICS LETTERS A, 2016, 380 (22-23) : 1990 - 1994
  • [8] Intersubband light absorption in double GaAs/AlGaAs quantum wells under lateral electric field
    Shumilov, A. A.
    Vinnichenko, M. Ya
    Balagula, R. M.
    Makhov, I. S.
    Firsov, D. A.
    Vorobjev, L. E.
    17TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS (RYCPS 2015), 2016, 690
  • [9] Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells
    da Cunha, J. F. R.
    da Silva, S. W.
    Morais, P. C.
    Lamas, T. E.
    Quivy, A. A.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (04)
  • [10] Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells
    Belevskii, P.A.
    Vinoslavskii, M.N.
    Vainberg, V.V.
    Pylypchuk, O.S.
    Poroshin, V.N.
    Fizika Nizkikh Temperatur, 2022, 48 (02): : 176 - 180
123