Si doping-induced phase control, formation of p-type and n-type GaAs nanowires

被引：0

作者：

Kang, Yubin ^{[1
]}

Tang, Jilong ^{[1
]}

Azad, Fahad ^{[2
]}

Zhu, Xiaotian ^{[1
]}

Chen, Xue ^{[1
]}

Chu, Xueying ^{[1
]}

Wang, Dengkui ^{[1
]}

Fang, Xuan ^{[1
]}

Fang, Dan ^{[1
]}

Lin, Fengyuan ^{[1
]}

Li, Kexue ^{[1
]}

Wang, Xiaohua ^{[1
]}

Wei, Zhipeng ^{[1
]}

机构：

[1] State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun,130022, China

[2] School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), H-12 Islamabad, Islamabad,44000, Pakistan

来源：

Vacuum | 2022年 / 195卷

基金：

中国国家自然科学基金;

关键词：

45;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

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[22] CHARGE FUNNELING IN N-TYPE AND P-TYPE SI SUBSTRATES
MCLEAN, FB
OLDHAM, TR
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[23] POLYACETYLENE, (CH)X - N-TYPE AND P-TYPE DOPING AND COMPENSATION
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HANNA, J
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[25] RESISTIVITY OF N-TYPE AND P-TYPE CRYSTALLINE SILICON, DOPING DEPENDENCE
PAWLIK, M
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[26] Degenerate p-Type and n-Type Doping of Diamane by Molecular Adsorption
Fu, Shiyang
Liu, Yaning
Li, Junyan
Wan, Linfeng
Gao, Nan
Li, Hongdong
JOURNAL OF PHYSICAL CHEMISTRY C, 2023, 127 (20): : 9939 - 9946
[27] P-TYPE AND N-TYPE DOPING OF ZNSE - EFFECTS OF HYDROGEN INCORPORATION
FISHER, PA
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PETRICH, GS
KOLODZIEJSKI, LA
WALKER, J
JOHNSON, NM
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 729 - 733
[28] INFLUENCE OF COMPENSATION ON RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS
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TROFIM, VG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1089 - +
[29] METALLIZATION SYSTEMS FOR OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS
GUPTA, RP
FREYER, J
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (05) : 459 - 467
[30] Radiative recombination in n-type and p-type GaAs compensated with Li
Gislason, H.P.
Yang, B.H.
Petursson, J.
Linnarsson, M.
Journal of Applied Physics, 1993, 74 (12):

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