High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics

被引：0
|
作者：
Narang, Kapil [1 ,2 ]
Pandey, Akhilesh [1 ]
Khan, Ruby [1 ]
Singh, Vikash K. [1 ]
Bag, Rajesh K. [1 ]
Padmavati, M.V.G. [1 ]
Tyagi, Renu [1 ]
Singh, Rajendra [2 ]
机构：
[1] Solid State Physics Laboratory, Timarpur, Lucknow Road, Delhi,110054, India
[2] Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi,110016, India
来源：
Materials Science and Engineering: B | 2022年 / 278卷
关键词：
549.3; Others; including Bismuth; Boron; Cadmium; Cobalt; Mercury; Niobium; Selenium; Silicon; Tellurium and Zirconium - 712.1 Semiconducting Materials - 741.1 Light/Optics - 804.1 Organic Compounds - 804.2 Inorganic Compounds - 921.3 Mathematical Transformations - 931.2 Physical Properties of Gases; Liquids and Solids - 933.1.2 Crystal Growth - 951 Materials Science;
D O I：
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中图分类号：
学科分类号：
摘要：
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