Wide-ranging control of carrier lifetimes in n-type 4H-SiC epilayer by intentional vanadium doping

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作者：
Murata, K. [1 ]
Tawara, T. [2 ,3 ]
Yang, A. [1 ]
Takanashi, R. [1 ]
Miyazawa, T. [1 ]
Tsuchida, H. [1 ]
机构：
[1] Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa,240-0196, Japan
[2] National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki,305-8568, Japan
[3] Fuji Electric Co. Ltd., 4-18-1 Tsukama, Matsumoto, Nagano,390-0821, Japan
来源：
Journal of Applied Physics | 2019年 / 126卷 / 04期
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