Effect of different precursors on morphology of CVD synthesized MoSe2

Transition metal dichalcogenides (TMD's) have emerged as a very appealing candidate for useful implementations in optoelectronics and electronics devices. In two-dimensional TMD's materials, in bulk MoSe2 has an indirect bandgap of 1.1 eV as well as in monolayer MoSe2 has a direct bandgap of 1.5 eV. Due to bandgap tunability and notable interaction of light over a wide bandwidth ranging from infrared to ultraviolet wavelength, MoSe2 possesses suitable property for optoelectronics devices. Chemical Vapor Deposition (CVD) represents an attractive approach for the growth of MoSe2 monolayer or bulk thin films and nanoflakes. MoSe2 has synthesized through CVD method and its structural properties have been studied by varying the growth temperature. Further the role of seeding promoter during the synthesis of MoSe2 through CVD and its effects on crystalline size has been discussed. XRD has been used to examine the crystalline size of synthesized MoSe2 sample and found that the synthesized MoSe2 nanoflakes/films crystalline has sized up to 4–5 µm without any seeding promoter. We have changed the growth temperature from 750 °C to 820 °C, keeping the pressure constant, in result, a slight change in the crystalline size of MoSe2 is observed. Further when NaCl has used as a seeding promoter, the crystalline size has reduced and observed to be 0.48 µm. Nevertheless, we have also illuminated the morphology of MoSe2 nanoflakes/films and discussed the associated growth parameters during CVD process. © 2022