A 11.3-16.6-GHz VCO With Constructive Switched Magnetic Coupling in 65-nm CMOS

被引:1
|
作者
Lyu, Yuetong [1 ]
Song, Changwenquan [1 ]
Qin, Pei [2 ]
Wu, Liang [1 ]
机构
[1] Chinese Univ Hong Kong, Sch Sci & Engn SSE, Guangdong Hong Kong Macao Joint Lab Millimeter Wa, Shenzhen 518172, Peoples R China
[2] South China Univ Technol, Sch Microelect, Guangdong Hong Kong Macao Joint Lab Millimeter Wa, Guangzhou 510641, Peoples R China
基金
中国国家自然科学基金;
关键词
CMOS; dual-band; figure-of-merit (FoM); phase noise; quality factor (Q); constructive switched magnetic coupling (CSMC); tuning range; voltage-controlled oscillator (VCO); WIDE TUNING-RANGE; DESIGN; NOISE; INDUCTOR;
D O I
10.1109/JETCAS.2023.3344510
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conventional transformer-based magnetic tuning has demonstrated dual-band or even multi-band operation for voltage-controlled oscillators (VCOs). However, the destructive magnetic coupling employed introduces implicit loss to the transformer thus degrading its quality factor (Q), and achieves a continuous frequency coverage resulting in inferior performance. To address this issue, this paper proposes a constructive switched magnetic coupling (CSMC) technique, realizing dual-band operation with the Q improvement into one band due to the in-phase coupling and the explicit switch. For validation, a transformer employing the CSMC technique is designed and deployed in a dual-band VCO design. Fabricated in a 65-nm CMOS process, the VCO is measured with an oscillation frequency range of 37.8%, from 11.3 to 16.6 GHz, while consuming 2.5-mW from a 0.65-V voltage supply. Within the entire frequency coverage, the measured phase noise ranges from -129.6 to -123.7 at 10-MHz offset, resulting in FoM of 186-192.1 dBc/Hz. The core area of the chip is 0.43 x 0.25 mm(2) excluding pads.
引用
收藏
页码:133 / 141
页数:9
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