Preparation and numerical simulation of cds/p-si heterojunction solar cell

In this paper, undoped CdS/p-Si heterojunction solar cell was prepared by physical vapor deposition, and we make a numerical simulation to analysis and optimise for important factors, which can effect efficiency of solar cell. the factors are work function of materials of the front, back electrode and the front, back surface recombination. The results of experiment indicated that the CdS films have a [111] preferential orientation with good crystallinity. 60 nm CdS thin films has high optical transmittance in 500-1100 nm wavelength range and ρc of 3.1 Ω·cm2 can be obtained for CdS/p-Si contact with 60 nm CdS layer. What's more, In2O3 film can be seen that average transmittance and sheet resistance were 90.88% and 74.54 Ω/ respectively, which can collect carrier effectively. After all kinds of optimizations, under the condition of 25℃,AM 1.5, the PCE of 10.63% can be possessed for CdS/p-Si heterojunction solar cell(the area of cell is 1 cm2). The simulation results show that CdS/p-Si solar cell possesses the highest power conversion efficiency(PCE) of 25.36% after a variety of optimizations. © 2019, Editorial Board of Acta Energiae Solaris Sinica. All right reserved.