A low standby-power fast carbon nanotube ternary SRAM cell with improved stability

被引:0
|
作者
Gang Li [1 ]
Pengjun Wang [1 ,2 ]
Yaopeng Kang [1 ]
Yuejun Zhang [1 ]
机构
[1] Faculty of Electrical Engineering and Computer Science, Ningbo University
[2] College of Mathematics, Physics and Electronic Information Engineering, Wenzhou
关键词
D O I
暂无
中图分类号
TB383.1 []; TQ127.11 [];
学科分类号
摘要
Power dissipation, speed and stability are the most important parameters for multiple-valued SRAM design. To reduce the power consumption and further improve the performance of the ternary SRAM cell, we propose a low standby-power fast ternary SRAM cell based on carbon nanotube field effect transistors(CNFETs).The performance is simulated in terms of three criteria including standby-power, delay(write and read) and stability(RSNM). Compared to the novel ternary SRAM cell, our results show that the average standby-power, write and read delay of the proposed cell are reduced by 78.1%, 39.6% and 58.2%, respectively. In addition, the RSNM under process variations is 2.01× and 1.95× of the conventional and novel ternary SRAM cells, respectively.
引用
收藏
页码:74 / 80
页数:7
相关论文
共 50 条
  • [31] GAAFET based SRAM Cell to Enhance Stability for Low Power Applications
    Amit Kumar
    Manisha Pattanaik
    Pankaj Srivastava
    Anil Kumar Rajput
    Silicon, 2022, 14 : 8161 - 8172
  • [32] Low standby leakage 12T SRAM cell characterisation
    Yadav, Arjun
    Nakhate, Sangeeta
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2016, 103 (09) : 1446 - 1459
  • [33] Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices
    Abbasian, Erfan
    Birla, Shilpi
    Moslem, Emad Mojaveri
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2022, 50 (11) : 3827 - 3845
  • [34] A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors
    Sun, Yanan
    Jiao, Hailong
    Kursun, Volkan
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (09) : 1729 - 1739
  • [35] Low-power fast (LPF) SRAM cell for write/read operation
    Prabhu, C. M. R.
    Singh, Ajay Kumar
    IEICE ELECTRONICS EXPRESS, 2011, 8 (18): : 1473 - 1478
  • [36] A Low Power and Robust Carbon Nanotube 6T SRAM Design with Metallic Tolerance
    Sun, Luo
    Mathew, Jimson
    Shafik, Rishad A.
    Pradhan, Dhiraj K.
    Li, Zhen
    2014 DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION (DATE), 2014,
  • [37] Standby Power Reduction and SRAM Cell Optimization for 65nm Technology
    Lakshminarayanan, S.
    Joung, J.
    Narasimhan, G.
    Kapre, R.
    Slanina, M.
    Tung, J.
    Whately, M.
    Hou, C-L.
    Liao, W-J.
    Lin, S-C.
    Ma, P-G.
    Fan, C-W.
    Hsieh, M-C.
    Liu, F-C.
    Yeh, K-L.
    Tseng, W-C.
    Lu, S. W.
    ISQED 2009: PROCEEDINGS 10TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, VOLS 1 AND 2, 2009, : 471 - +
  • [38] A Novel Low Power 12T SRAM Cell with Improved SNM
    Sharma, Ashima
    Bharti, Manisha
    PROCEEDINGS OF THE 2019 6TH INTERNATIONAL CONFERENCE ON COMPUTING FOR SUSTAINABLE GLOBAL DEVELOPMENT (INDIACOM), 2019, : 98 - 101
  • [39] Development of a Low Standby Power Six-Transistor CMOS SRAM Employing a Single Power Supply
    Kobayashi, Nobuaki
    Enomoto, Tadayoshi
    IEICE TRANSACTIONS ON ELECTRONICS, 2018, E101C (10): : 822 - 830
  • [40] An Ultra-Low-Power and Robust Ternary Static Random Access Memory Cell Based on Carbon Nanotube FETs
    Moaiyeri, Mohammad Hossein
    Akbari, Hamed
    Moghaddam, Majid
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 13 (04) : 617 - 627