A Monolithic Bi-Directional GaN/SiC Hybrid Field-Effect Transistor

被引：2

作者：

Yang, Yingchen ^{[1
]}

Feng, Sirui ^{[1
]}

Zhou, Zongjie ^{[1
]}

Chen, Tao ^{[1
]}

Wu, Zheng ^{[1
]}

Du, Yangming ^{[1
]}

Ng, Yat Hon ^{[1
]}

Liao, Hang ^{[1
]}

Huang, Yumeng ^{[1
]}

Wang, Heng ^{[1
]}

Zheng, Zheyang ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

关键词：

GaN/SiC; hybrid field-effect transistors (HyFETs); monolithic integration; bi-directional;

D O I：

10.1109/ISPSD59661.2024.10579661

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Power electronics systems such as matrix converters require devices that are capable of blocking high voltage and conducting current in both forward and reverse directions. In this work, we present a monolithic bi-directional GaN/SiC hybrid field-effect transistor (BD-HyFET). The device combines the merits of SiC junction field-effect transistor (JFET) structure and p-GaN gated 2-dimensional-electron-gas (2DEG) channel, enabling the inclusion of a high mobility channel and area-efficient vertical voltage blocking structure. The fabricated devices exhibit bi-directional behavior at both OFF-state and ON-state, with almost symmetrical characteristics in the 1(st) and 3(rd) I-V quadrants. Non-destructive off-state breakdown characteristics with breakdown voltages over 600 V were obtained in both forward and reverse directions. The four-quadrant switching characteristics of the GaN/SiC BD-HyFET were verified. In addition, the characteristics of the BD-HyFET as an AC power chopper were successfully demonstrated.

引用

页码：343 / 346

页数：4

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