A 15.7-dBm 164.270 GHz Power Amplifier with Asymmetric Slotline-Based Series-Parallel Combiner in 130-nm SiGe BiCMOS Technology

被引：0

作者：

Park, Gunwoo ^{[1
]}

Kim, Hyunjoon ^{[1
]}

Jeon, Sanggeun ^{[1
]}

机构：

[1] Korea Univ, Dept Elect Engn, Seoul, South Korea

来源：

2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024 | 2024年

关键词：

sub-terahertz; SiGe BiCMOS; asymmetric slotline-based series-parallel combiner (ASSPC); high-power; wideband; power amplifier; GAIN; TRANSFORMER; BAND;

D O I：

10.1109/RFIC61187.2024.10600010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a high-power wideband subterahertz power amplifier (PA) in a 130- nm SiGe BiCMOS technology. An asymmetric slotline-based series-parallel combiner (ASSPC) is proposed to enhance the output power and bandwidth. The ASSPC enables low-loss and wideband combining of four differential power cells while facilitating load-pull matching with reduced impedance imbalance between differential transistors. With an aid of the ASSPC, the PA achieves the highest saturated output power (P-sat) of 15.7 dBm at 235 GHz and the widest P-sat 3-dB bandwidth of 106 GHz among the existing Si-based PAs operating above 200 GHz. It shows a peak gain of 21.2 dB and a wide 5-dB bandwidth of 78 GHz.

引用

页码：195 / 198

页数：4

共 48 条

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