Suppressing harmful defects to enhance the performance of kesterite solar cells via extra Mg-doping

被引：2
|
作者：
Mi, Yajin [1 ,3 ]
Yang, Yanchun [1 ,2 ,3 ]
Cui, Guonan [1 ,3 ]
Wang, Rui [1 ,3 ]
Bai, Lulu [1 ,3 ]
Gong, Zhihui [1 ]
Li, Shuyu [2 ]
Lv, Xiaogong [4 ]
Cao, Yongjun [1 ,3 ]
Zhu, Chengjun [2 ]
机构：
[1] Inner Mongolia Normal Univ, Inner Mongolia Autonomous Reg Engn Res Ctr Rare Ea, Sch Phys & Elect Informat, 81 Zhaowuda Rd, Hohhot 010022, Inner Mongolia, Peoples R China
[2] Inner Mongolia Univ, Sch Phys Sci & Technol, 2352 West Univ Rd, Hohhot 010021, Inner Mongolia, Peoples R China
[3] Inner Mongolia Normal Univ, Inner Mongolia Key Lab Phys & Chem Funct Mat, 81 Zhaowuda Rd, Hohhot 010022, Inner Mongolia, Peoples R China
[4] Ordos Inst Technol, Dept Med, 1 Ordos St East, Ordos 017000, Inner Mongolia, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2024年 / 1005卷
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Cu 2 ZnSn(S; Se) 4 thin film; The extra incorporated cations; Mg doping; Defects and defect clusters; CU2ZNSN(S; INTERFACE; LAYER;
D O I：
10.1016/j.jallcom.2024.176127
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Extra-cations doping is known to be an effective approach to control the generation of harmful defects and bandtail states in Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. Here, Mg is used as the extra doped element candidate, the impact of its doping concentration on the composition, structure, morphology, electrical properties, and efficiency of CZTSSe devices is systematically investigated, and its optimal doping concentration is 2 %, which can improve the efficiency of devices from 7.08 % to 9.0 %. The remarkably improved efficiency of the extra Mgincorporated devices can be explained by the better crystalline quality and fewer deep defects. This work can provide a new approach to boost the performance of kesterite solar cells.
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页数：9
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