Controlling Gold-Assisted Exfoliation of Large-Area MoS2 Monolayers with External Pressure
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作者:
Chen, Sikai
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机构:
Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Chen, Sikai
[1
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Li, Bingrui
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Li, Bingrui
[1
]
Dai, Chaoqi
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Dai, Chaoqi
[1
]
Zhu, Lemei
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Zhu, Lemei
[1
]
Shen, Yan
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Shen, Yan
[1
]
Liu, Fei
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Liu, Fei
[1
]
Deng, Shaozhi
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Deng, Shaozhi
[1
]
Ming, Fangfei
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Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
Ming, Fangfei
[1
]
机构:
[1] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat, Guangzhou 510275, Peoples R China
mechanical exfoliation;
gold-assisted;
MoS2;
transition metal dichalcogenides;
pressure;
INTEGRATED-CIRCUITS;
CONTACT;
D O I:
10.3390/nano14171418
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Gold-assisted exfoliation can fabricate centimeter- or larger-sized monolayers of van der Waals (vdW) semiconductors, which is desirable for their applications in electronic and optoelectronic devices. However, there is still a lack of control over the exfoliation processes and a limited understanding of the atomic-scale mechanisms. Here, we tune the MoS2-Au interface using controlled external pressure and reveal two atomic-scale prerequisites for successfully producing large-area monolayers of MoS2. The first is the formation of strong MoS2-Au interactions to anchor the top MoS2 monolayer to the Au surface. The second is the integrity of the covalent network of the monolayer, as the majority of the monolayer is non-anchored and relies on the covalent network to be exfoliated from the bulk MoS2. Applying pressure or using smoother Au films increases the MoS2-Au interaction, but may cause the covalent network of the MoS2 monolayer to break due to excessive lateral strain, resulting in nearly zero exfoliation yield. Scanning tunneling microscopy measurements of the MoS2 monolayer-covered Au show that even the smallest atomic-scale imperfections can disrupt the MoS2-Au interaction. These findings can be used to develop new strategies for fabricating vdW monolayers through metal-assisted exfoliation, such as in cases involving patterned or non-uniform surfaces.
机构:
Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
Nam, Hongsuk
Wi, Sungjin
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Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
Wi, Sungjin
Rokni, Hossein
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Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
Rokni, Hossein
Chen, Mikai
论文数: 0引用数: 0
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机构:
Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
Chen, Mikai
Priessnitz, Greg
论文数: 0引用数: 0
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机构:
Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
Priessnitz, Greg
Lu, Wei
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Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
Lu, Wei
Liang, Xiaogan
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Univ Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USAUniv Michigan, Dept Mech Engn, WE Lay Automot Lab 2011, Ann Arbor, MI 48109 USA
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Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Tongay, Sefaattin
Fan, Wen
论文数: 0引用数: 0
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Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Univ Sci & Technol China, Dept Thermal Sci & Energy Engn, Hefei 230027, Anhui, Peoples R ChinaUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Fan, Wen
Kang, Jun
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机构:
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R ChinaUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Kang, Jun
Park, Joonsuk
论文数: 0引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Park, Joonsuk
Koldemir, Unsal
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Koldemir, Unsal
Suh, Joonki
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Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Suh, Joonki
Narang, Deepa S.
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Alliance Univ, ACED, Dept Phys, Bangalore 562106, Karnataka, IndiaUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Narang, Deepa S.
Liu, Kai
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Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Liu, Kai
Ji, Jie
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Univ Sci & Technol China, Dept Thermal Sci & Energy Engn, Hefei 230027, Anhui, Peoples R ChinaUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Ji, Jie
Li, Jingbo
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Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R ChinaUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Li, Jingbo
Sinclair, Robert
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Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Sinclair, Robert
Wu, Junqiao
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机构:
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USAUniv Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
机构:
Inst Phys, Ctr Adv Laser Tech, Zagreb 10000, Croatia
CSIC, Inst Ciencia Mat Madrid ICMM, Mat Sci Factory, Madrid 28049, SpainInst Phys, Ctr Adv Laser Tech, Zagreb 10000, Croatia
Radatovic, Borna
Cakiroglu, Onur
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CSIC, Inst Ciencia Mat Madrid ICMM, Mat Sci Factory, Madrid 28049, SpainInst Phys, Ctr Adv Laser Tech, Zagreb 10000, Croatia
机构:
Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Luo, Zhi
Lin, Yunli
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机构:
Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Lin, Yunli
Yang, Zhao
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Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Yang, Zhao
Qian, Junqi
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Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Qian, Junqi
Ng, Sheung Mei
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h-index: 0
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Ng, Sheung Mei
Leung, Chi Wah
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Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Leung, Chi Wah
Wang, Hui
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R ChinaJinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China
Wang, Hui
2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC),
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