Tailoring Interlayer Coupling in Few-Layer MoS2 with Stacking Configuration

被引：0

作者：

Kim, Jong Hun ^{[1
,2
,3
]}

Jin, Kyung-Hwan ^{[4
,5
,6
]}

Jung, Yeonjoon ^{[2
]}

Lee, Gwan-Hyoung ^{[2
,3
,7
,8
]}

Baik, Jaeyoon ^{[9
]}

Kim, Daehyun ^{[9
,10
]}

Jo, Moon-Ho ^{[11
,12
]}

Baddorf, Arthur P. ^{[13
]}

Li, An-Ping ^{[13
]}

Park, Jewook ^{[13
]}

机构：

[1] Inha Univ, Dept Phys, Inchon 22212, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

[3] Seoul Natl Univ, Res Inst Adv Mat, Seoul 08826, South Korea

[4] Jeonbuk Natl Univ, Dept Phys, Jeonju 54896, South Korea

[5] Jeonbuk Natl Univ, Res Inst Phys & Chem, Jeonju 54896, South Korea

[6] Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea

[7] Seoul Natl Univ, Res Inst Adv Mat, Inst Engn Res, Seoul 08826, South Korea

[8] Seoul Natl Univ, Inst Appl Phys, Seoul 08826, South Korea

[9] Pohang Accelerator Lab, Pohang Si 37673, Gyeongsangbug D, South Korea

[10] Korea Testing & Res Inst, Jongga Ro 15, Ulsan 44412, South Korea

[11] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea

[12] Inst Basic Sci IBS, Ctr Selfeassembly & Complex, Pohang 37673, South Korea

[13] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

ACS APPLIED NANO MATERIALS | 2024年 / 7卷 / 15期

关键词：

Interlayer coupling; electrical bandgap; localdensity of states; transition metal dichalcogenides; Kelvin probe microscopy; scanning tunneling microscopy andspectroscopy; density functional theory; MONOLAYER;

D O I：

10.1021/acsanm.4c02834

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We manipulated the stacking configuration of a few-layer MoS2 to investigate the impact of interlayer coupling on electrical band engineering. By simultaneously synthesizing two distinct stacking types of MoS2 islands, wedding cake (W) and spiral (S), on the same substrate, we explored layer-dependent electrical properties under identical experimental conditions. We used multiple scanning probe microscopy techniques to map local electronic properties with respect to the number of layers, stacking configurations, and local heterogeneities. First-principles calculations verified the role of distinct interlayer coupling in terms of the interlayer distance. Our findings highlight the critical role of interlayer coupling in applications of transition metal dichalcogenides.

引用

页码：17214 / 17220

页数：7

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