Cr and Mn doping AgNbO3 3 for high Curie temperature ferromagnetic half-metals

被引:0
|
作者
Elkhou, A. [1 ,2 ]
Drissi, L. B. [1 ,2 ,3 ]
Assad, R. [1 ,4 ]
机构
[1] Mohammed V Univ Rabat, Fac Sci, LPHE MS, Rabat, Morocco
[2] Mohammed V Univ Rabat, Fac Sci, CPM Ctr Phys & Math, MB 1014 RP, Rabat, Morocco
[3] Hassan II Acad Sci & Technol, Coll Phys & Chem Sci, Rabat, Morocco
[4] Natl Ctr Sci & Tech Res CNRST, Rabat, Morocco
关键词
Perovskites; Half-metallic materials; Ferromagnetic order; Double exchange; Curie temperature; BAND-GAP; OPTICAL-PROPERTIES; PHASE-TRANSITIONS; 1ST-PRINCIPLES; PEROVSKITE; MG; STATE;
D O I
10.1016/j.physb.2024.416311
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The alterations in the electronic and magnetic properties of AgNbO3 3 induced by Cr and Mn doping at two concentrations (6% and 14%) are investigated within the framework of density functional theory (DFT), both with and without the Hubbard correction (U) as well as HSE method. Half-metallic ferromagnetic behavior with 100% polarization is observed for all dopants. Double exchange coupling is the mechanism responsible for the ferromagnetic interaction in these materials. Our results also indicates that the correction with U-term and HSE method provide consistent values that closely align with experimental measurements, and significantly improve the standard DFT description. Finally, the value of the Curie temperature, which reaches 425.49 (K), exceeds the ambient temperature, revealing the potential use of this doped material for new spintronic devices.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Preparation of ferromagnetic (In,Mn)As with a high Curie temperature of 90 K
    Schallenberg, T.
    Munekata, H.
    APPLIED PHYSICS LETTERS, 2006, 89 (04)
  • [22] Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga, Mn)As
    Wang, M.
    Marshall, R. A.
    Edmonds, K. W.
    Rushforth, A. W.
    Campion, R. P.
    Gallagher, B. L.
    APPLIED PHYSICS LETTERS, 2014, 104 (13)
  • [23] High Curie temperature CoSi nanowires by Mn-doping
    Ruiz, Angel R.
    Hernandez-Perez, Jose
    Fonseca, Luis F.
    Yacaman, Miguel Jose
    Ortega, Eduardo
    Ponce, Arturo
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (21)
  • [24] High Curie temperature CoSi nanowires by Mn-doping
    1600, American Institute of Physics Inc. (124):
  • [25] An effective approach to achieve high energy storage density and efficiency in BNT-based ceramics by doping AgNbO3
    Wang, Hua
    Jiang, Xiaoli
    Liu, Xiaoqin
    Yang, Ruonan
    Yang, Yang
    Zheng, Qiaoji
    Kwok, K. W.
    Lin, Dunmin
    DALTON TRANSACTIONS, 2019, 48 (48) : 17864 - 17873
  • [26] Ferromagnetic half-metal with high Curie temperature in Cr P nanoribbons: good material for spintronic applications
    Movlarooy, Tayebeh
    Vatankhahan, Adeleh
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (35) : 24155 - 24162
  • [27] Monolayer MX2 (M = Cr, Mn; X = Se, Te) with a square lattice: A ferromagnetic half-metal with high Curie temperature
    Wang, Zhicui
    Zhang, Michang
    Ge, Yanfeng
    Wan, Wenhui
    Liu, Yong
    RESULTS IN PHYSICS, 2023, 51
  • [28] Ferromagnetic TM2BC (TM = Cr, Mn) monolayers for spintronic devices with high Curie temperature
    Abdullahi, Yusuf Zuntu
    Vatansever, Zeynep Demir
    Ersan, Fatih
    Akinci, Umit
    Akturk, Olcay Uzengi
    Akturk, Ethem
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 23 (10) : 6107 - 6115
  • [29] Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics
    Mao, Shuaifei
    Luo, Nengneng
    Han, Kai
    Feng, Qin
    Chen, Xiyong
    Peng, Biaolin
    Liu, Laijun
    Hu, Changzheng
    Zhou, Huanfu
    Toyohisa, Fujita
    Wei, Yuezhou
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (10) : 7731 - 7741
  • [30] Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics
    Shuaifei Mao
    Nengneng Luo
    Kai Han
    Qin Feng
    Xiyong Chen
    Biaolin Peng
    Laijun Liu
    Changzheng Hu
    Huanfu Zhou
    Fujita Toyohisa
    Yuezhou Wei
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 7731 - 7741