Enhanced ultra-high efficiency in high-energy-density PbHfO3-based antiferroelectric ceramics through synergistic effect design

PbHfO3-based 3-based antiferroelectric materials with the giant power density and ultrafast charge-discharge performance have exhibited the potential application in advanced pulsed power microelectronic devices. Nevertheless, the huge challenge of the large driving field of the AFE-FE phase transition ( E AFE-FE ) accompanied by the poor breakdown electric strength (Eb) E b ) still exists up to now and further becomes a key bottleneck restricting the simultaneous realization of high energy storage density and efficiency. Hence, we report the synergistic effect to combine the tailor ABO3 3 perovskite structure for minimizing the electric hysteresis and increasing bandgap width to obtain the ultrahigh E b . Rietveld refinements of the XRD patterns and Raman spectra experiments that demonstrate the average electronegativity and a redshift with the elevated Sr content attributable to enhancing bonding energy of cation-O bonds and antipolar ordering in crystalline structure, effectively resulting in stability of the PbHfO3-based 3-based antiferroelectric structure. Meanwhile, a ultrahigh E b of 450 kV/cm is achieved owing to optimizing the average grain size and widening bandgap width. A remarkable energy storage density of 7.29 J/ cm3 3 and record-high energy storage efficiency of 96.40 % are achieved via synergistic effect in (Pb 0.93 La 0.02 Sr 0.04 )(Hf 0.475 Sn 0.475 Ti 0.05 )O 3 (PLS4HST) ceramics under respective maximum applied field. In addition, large power density of 173.40 MW/cm3 3 and excellent discharge energy density of 4.90 J/cm3 3 as well as fast discharge rate of 166.90 ns and superior frequency stability (1 140 Hz), along with outstanding thermal stability (25 150 degrees C), degrees C), have been simultaneously presented in PLS4HST ceramic. These results provide a good paradigm by synergistic effect designing for exploring high-performance dielectrics to meet the demanding requirements of advanced pulsed power electronic devices.