A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm

被引：0

作者：

Lang, Jiashun ^{[1
]}

Lv, Beibei ^{[1
]}

Zhang, Di ^{[1
]}

Liu, Yu ^{[1
]}

Zhang, PengFei ^{[2
]}

Mo, Jiongjiong ^{[1
]}

Wang, Zhiyu ^{[1
]}

Chen, Hua ^{[1
]}

Yu, Faxin ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Aeronaut & Astronaut, Hangzhou 310027, Peoples R China

[2] Zhejiang Zhenlei Technol Co Ltd, Hangzhou 310030, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2024年 / 21卷 / 17期

关键词：

switch-HEMT; small signal model; capacitance scanning; gate capacitance; ACCURATE;

D O I：

10.1587/elex.21.20240348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm is proposed. In the algorithm, the proportional relationship among intrinsic C gs , C gd and parasitic C g is scanned based on a simplified small-signal model without any approximations for capacitance. Comparing with the measured S parameters, optimized model parameters with the minimum error, especially the parasitic C g , are achieved without assistance of extra methods such as EM analysis. Using this method, the accurate small-signal model for a 0.25 mu m gate-length GaN switchHEMT up to 26.5GHz is extracted. This convenient method can be used for both GaN and GaAs switch-HEMT.

引用

页数：5

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