"Enhancing" the energy storage properties of dielectric films through ultra-small area metallization

被引：1

作者：

Chen, Fujia ^{[1
]}

Li, Jianfeng ^{[1
]}

Zhao, Yuetao ^{[1
,2
,3
]}

Zhou, Yujiu ^{[2
]}

Ye, Hu ^{[1
,2
]}

Yang, Yajie ^{[1
]}

Xu, Jianhua ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China

[2] Xinyun Elect Components Co, Dept Film Capacitors, China ZhenHua Grp, Guiyang 550018, Peoples R China

[3] Jiangsu Univ Sci & Technol, Ocean Coll, Zhenjiang 212100, Peoples R China

来源：

MATERIALS LETTERS | 2024年 / 377卷

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Electronic materials; Polymers; BOPVDF; Metallization area; Energy storage density;

D O I：

10.1016/j.matlet.2024.137359

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The flat-plate capacitance model is commonly used to study the energy-storage performance of dielectric films. The area of the metal electrodes can significantly affect the test results of the energy storage performance. Ultra-small metallization area films exhibit stunning charge-discharge behavior in pulse testing. An energy storage density of 56.98 J/cm(3) was easily obtained in tests on pure biaxially oriented poly (vinylidene fluoride) (BOPVDF) films with an ultra-small metallization area of 0.01 cm(2). The edge electric field is the main reason for the ultrahigh energy density of the films.

引用

页数：4

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