Enhanced Shubnikov-de Haas Oscillations in High Mobility InAlN/GaN Two-Dimensional Electron Gas

A high-quality In0.17Al0.83N/GaN heterostructure with a record high mobility of 11370 cm(2) V-1 s(-1) is achieved at 2 K using the metal oxide chemical vapor deposition (MOCVD) technique, where enhanced Shubnikov-de Haas (SdH) oscillations of two-dimensional electron gas (2DEG) are observed at low temperatures up to 20 K. In this study, we explore the quantum transport properties induced by 2DEG using perpendicular magnetic (B-perpendicular to) field strengths up to 14 T. Excellent crystalline and structural quality of the ultrathin InAlN/GaN heterostructure was revealed by high resolution X-ray diffraction (HRXRD) and high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM). From the temperature-dependent oscillation amplitude, we have derived effective mass m* approximate to 0.247m(e). Furthermore, the dominance of small-angle scattering in the 2DEG channel is evidenced by a quantum lifetime (tau(q)) to Hall transport lifetime (tau(t)) ratio of less than unity (tau(q)/tau(t) << 1). These findings offer a robust foundation for exploration into fundamental physics and emergent phenomena in quantum transport within the InAlN/GaN 2DEG, leading to better suitability and a way forward to high power-high frequency GaN high electron mobility transistor (HEMT) development.