Effect of Structures with Structured Surface Pad on Material Removal Rate in Chemical Mechanical Polishing

被引:1
|
作者
Park, Youngwook [1 ,2 ]
Jung, Hokyoung [1 ,2 ]
Kim, Doyeon [1 ]
Lee, Taekyung [1 ]
Jeong, Haedo [2 ]
Kim, Hyoungjae [1 ]
机构
[1] Korea Inst Ind Technol, Precis Mech Proc & Control R&D Grp, Busan 46938, South Korea
[2] Pusan Natl Univ, Sch Mech Engn, Busan 46241, South Korea
基金
新加坡国家研究基金会;
关键词
chemical mechanical polishing; material removal; polishing pad; structured surface; surface functionalization; ABRASIVE PAD; BREAK-IN; CONTACT; TOPOGRAPHY; MODEL;
D O I
10.1149/2162-8777/ad68a2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the impact of the designed contact area (DCA) and designed contact length (DCL) on material removal rates (MRR) when using a pad with a structured surface in chemical mechanical polishing. The structure of the structured surface pad (SSP) was precisely defined, and an examination was conducted to assess the influence of variations in the shape, size, and spacing of the unit figure (UF) on the MRR. The results revealed that maintaining the DCA constant while altering the UF shape to extend the DCL led to a 203% increase in the MRR. Furthermore, modifications in the UF size enhanced the MRR by approximately 630%. The relationship between the DCL and MRR was dependent on the DCA. The characteristics of the SSP, particularly the concentrated pressure and involvement of slurry particles at the edges of the contact area, indicated that an increase in the DCL could augment the active slurry particles. This study offers valuable insights into the pad figure structure, simultaneously advancing our understanding of the pad surface topography and its influence on material removal. By focusing on both structural engineering and practical applications, this study paves the way for future research and enables further exploration in this field.
引用
收藏
页数:8
相关论文
共 50 条
  • [21] Tribological approaches to material removal rate during chemical mechanical polishing
    Hong Jin Kim
    Young-Jun Jang
    Jaekwang Choi
    Byungho Kwon
    Kuntak Lee
    Yongsun Ko
    Metals and Materials International, 2013, 19 : 335 - 339
  • [22] Investigation on Material Removal Uniformity in Electrochemical Mechanical Polishing by Polishing Pad with Holes
    Liu, Zuotao
    Jin, Zhuji
    Wu, Di
    Guo, Jiang
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (05) : P3047 - P3052
  • [23] Polishing Pad in Chemical Mechanical Polishing
    Cao W.
    Deng Z.-H.
    Li Z.-Y.
    Ge J.-M.
    Surface Technology, 2022, 51 (07): : 27 - 41
  • [24] Study on the Surface Characteristics of Polishing Pad Used in Chemical Mechanical Polishing
    Gao, Hong
    Su, Jianxiu
    DIGITAL DESIGN AND MANUFACTURING TECHNOLOGY, PTS 1 AND 2, 2010, 102-104 : 724 - +
  • [25] Polishing pad surface characterisation in chemical mechanical planarisation
    McGrath, J
    Davis, C
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2004, 153 : 666 - 673
  • [26] Polishing pad surface morphology and chemical mechanical planarization
    Castillo-Mejia, D
    Kelchner, J
    Beaudoin, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (04) : G271 - G278
  • [28] Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers
    Yan Li
    Wanqi Jie
    Renke Kang
    Hang Gao
    Rare Metals, 2011, 30 : 381 - 386
  • [29] Effect of mechanical anisotropy on material removal rate and surface quality during polishing CdZnTe wafers
    Li Yan
    Jie Wanqi
    Kang Renke
    Gao Hang
    RARE METALS, 2011, 30 (04) : 381 - 386
  • [30] Deep ensemble learning for material removal rate prediction in chemical mechanical planarization with pad surface topography
    Jeong, Jongmin
    Shin, Yeongil
    Jeong, Seunghun
    Jeong, Seonho
    Jeong, Haedo
    PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2024, 88 : 777 - 787