High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

被引：13

作者：

Mishra, J. K. ^{[1
]}

Dhar, S. ^{[1
]}

Brandt, O. ^{[2
]}

机构：

[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 47-48期

关键词：

Semiconductors; Epitaxy; Points defects; Photoconductivity and photovoltaics; FERMI-SURFACE;

D O I：

10.1016/j.ssc.2010.09.044

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using X-ray diffraction, photoconductivity and temperature dependent conductivity measurements, we investigate GaN:Gd layers grown by reactive molecular-beam epitaxy with the Gd concentration ranging from 7 x 10(15) to 8.5 x 10(18) cm(-3). Our study reveals that the incorporation of Gd produces a large concentration of defects in the GaN lattice. The density of these defects generated even with a Gd concentration as low as 7 x 10(15) cm(-3) is estimated to be as high as approximate to 10(19) cm(-3). The defect state is found to be located approximate to 450 meV away from the band edge. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：2370 / 2373

页数：4

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