High defect concentration in GaN:Gd layers grown by reactive molecular beam epitaxy

被引：13
|
作者：
Mishra, J. K. [1 ]
Dhar, S. [1 ]
Brandt, O. [2 ]
机构：
[1] Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 47-48期
关键词：
Semiconductors; Epitaxy; Points defects; Photoconductivity and photovoltaics; FERMI-SURFACE;
D O I：
10.1016/j.ssc.2010.09.044
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Using X-ray diffraction, photoconductivity and temperature dependent conductivity measurements, we investigate GaN:Gd layers grown by reactive molecular-beam epitaxy with the Gd concentration ranging from 7 x 10(15) to 8.5 x 10(18) cm(-3). Our study reveals that the incorporation of Gd produces a large concentration of defects in the GaN lattice. The density of these defects generated even with a Gd concentration as low as 7 x 10(15) cm(-3) is estimated to be as high as approximate to 10(19) cm(-3). The defect state is found to be located approximate to 450 meV away from the band edge. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2370 / 2373
页数：4
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