Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor

Reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with freewheeling diode integrated in the body by introducing n+ anode can realize the reverse conduction and optimize the turn-off characteristics of the device, which is a promising device in a power integrated circuit. In this work, a novel RC-LIGBT with electron-controlled gate (EG) and separated short-anode (SSA) is proposed and investigated by TCAD simulation, which can achieve low on-state voltage drop (V-on) and low turn-off loss (E-off) at the same time. The EG structure of p-n-n(+)-p (p(+) region/n-type silicon region/n-type barrier layer/p(+) region) is adopted, the gate electrode and anode electrode are connected by the EG structure. In the forward conduction state, a high-density electron accumulation layer is formed on the surface of the drift region by EG structure, which greatly reduces the V-on of the device. At the same time, the use of the SSA structure can also optimize the E-off of the device by forming an additional electron extraction channel. In addition, based on the EG structure, a low-doping p-drift can be combined with the SSA structure to simply achieve reverse-conduction and snapback-free characteristics. Furthermore, the EG structure and the SSA structure can complement each other. On the one hand, the high-density electron accumulation layer formed by EG structure compensates for the weakened conductance modulation effect caused by the SSA structure. On the other hand, the electron extraction channel of the SSA structure enables a large number of accumulated electrons to be removed quickly. The simulation results show that the proposed device has an excellent trade-off relationship between Von and Eoff, specifically, Von is 1.16V, which is 55% lower than that of SSA LIGBT, and E-off is 0.099 mJ/cm(2), which is 38.5% and 94.7% lower than that of SSA LIGBT and conventional LIGBT, respectively.